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Recovering of irradiation damaged BJTs by isothermal and isochronal annealing processes



  1. Department of Scientific Services, Atomic Energy Commission, P. O. Box 6091, Damascus, Syria


The recovery of damaged Bipolar Junction Transistors (BJTs) by irradiation is discussed. Two complementary types of BJTs (NPN and PNP) were exposed to high doses of neutrons and gamma rays. The irradiated transistors were recovered by isothermal annealing at ambient temperature and isochronal annealing with temperature increase up to 300 oC. Small and high recovery was obtained by using isothermal and isochronal annealing, respectively. Neutrons damaged transistors were less recovered than that of gamma rays. For BJTs irradiated by gamma rays, PNP type was less recovered than NPN type. While, similar recovery was obtained for both BJT types irradiated by neutrons..


Radiation defects on BJTs, Recovery, Isothermal annealing, Isochronal annealing.

Submitted at: Nov. 21, 2018
Accepted at: Oct. 9, 2019


J. ASSAF, Recovering of irradiation damaged BJTs by isothermal and isochronal annealing processes, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 9-10, pp. 641-648 (2019)