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Relation between the dark and photoelectronic properties of microcrystalline silicon

R. BRÜGGEMANN1,* , R. I. BADRAN2, S. XIONG3

Affiliation

  1. Institut für Physik, Carl von Ossietzky Universität Oldenburg, D-26111 Oldenburg, Germany
  2. Physics Department, The Hashemite University, P.O. Box 150459, Zarqa, Jordan
  3. Institute of Photo-electronics, Nankai University, Tianjin, 300071, China

Abstract

The dark conductivity, photoconductivity, and diffusion length have been determined in a comprehensive study on microcrystalline silicon samples, prepared under different deposition conditions: variation of substrate temperature, pressure, power, and silane to hydrogen ratio. The results show that the dark and majority carrier properties are correlated, which can be attributed to a Fermi-level related recombination rate and majority-carrier lifetime. In contrast, the observed distinct variation of the minority-carrier properties within a deposition series allows a more direct access to sample quality, as it cannot be directly linked with a Fermi level dependent lifetime. In contrast to the suggestion in the literature, the ratio of the mobility-lifetime products of both carrier types is shown not to be directly related to the Fermi level position..

Keywords

Microcrystalline silicon, Mobility-lifetime products, Dark conductivity, Photoconductivity.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

R. BRÜGGEMANN, R. I. BADRAN, S. XIONG, Relation between the dark and photoelectronic properties of microcrystalline silicon, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 348-351 (2007)