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Results on series and shunt resistances in a c-Si PV cell. Comparison using existing methods and a new one

D. COTFAS1,* , P. COTFAS1, S. KAPLANIS2, D. URSUTIU1

Affiliation

  1. Transilvania University, Brasov, 500036, Romania
  2. Technological and Educational Institutes, Patras, 26331, Greece

Abstract

The article includes a review of some methods to determine series and shunt resistances. It also presents a new method to determine series and shunt resistances and a comparison of results to previous literature methods. The new method is based on the one diode model for solar cells and is applied on a c-Si cell. The dependence of the series resistance on the irradiance levels is also presented. The complex programme developed to determine the cell characterization and implicitly for the determination of series resistance is included. The programme was created in the graphical programming language LabVIEW..

Keywords

Solar cell, Series and shunt resistance, Ideality factor, Maximum power point.

Submitted at: July 20, 2008
Accepted at: Nov. 11, 2008

Citation

D. COTFAS, P. COTFAS, S. KAPLANIS, D. URSUTIU, Results on series and shunt resistances in a c-Si PV cell. Comparison using existing methods and a new one, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 11, pp. 3124-3130 (2008)