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Role of nitrogen on formation of oxygen related donors in step annealed CZ-Silicon

S. SINGH1,* , B. C. YADAV2, R. SINGH2

Affiliation

  1. Sagar Institute of Technology & Management, Barabanki (U.P.), India
  2. Department of Physics, Lucknow University, Lucknow (U.P.), India

Abstract

Effect of low temperature pre-annealing at 480°C and high temperature at 1000°C for shorter duration of 10 h and longer duration of 40 h, followed by annealing at 650°C up to 900 h, has been studied in N-undoped/doped CZ-Silicon. Low temperature preannealing for a shorter duration followed by annealing at 650°C does not register an increase in donor concentration, while reverse is true for pre-annealing of 40h. Longer pre-annealing time at low temperature brings about a larger increase in the donor concentration during the annealing. Donors generated in N-un-doped samples never attain saturation up to 90 h of annealing at 650°C, while in N-doped silicon annealed for 60 h, they reached a saturation stage and no change is observed by annealing for longer duration. Neither the shorter nor the longer pre-annealing time has any effect on carrier concentration in N-doped samples pre-annealed at 1000°C. Existence of shallow thermal donors associated with N-O complexes and thermal donors associated with oxygen impurity only assisted by silicon self-interstitialcy has been established..

Keywords

Semiconductors, CZ-silicon, Thermal donors, Nitrogen.

Submitted at: Dec. 27, 2007
Accepted at: June 9, 2008

Citation

S. SINGH, B. C. YADAV, R. SINGH, Role of nitrogen on formation of oxygen related donors in step annealed CZ-Silicon, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 6, pp. 1522-1525 (2008)