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AINDRILA BERA1, ANUJA GHOSH1, MANAS GHOSH1,*
- Department of Chemistry, Physical Chemistry Section, Visva-Bharati University, Santiniketan, Birbhum 731235, West Bengal, India
Current work explores the influence of noise-binding energy (BE) interplay on three important electrical properties of GaAs quantum dot (QD) containing impurity. The said properties are Stark shift (SS), static dipole polarizability (SDP) and dynamic dipole polarizability (DDP). The study exploits Gaussian white noise and as a dopant we invoke Gaussian impurity. The route of introduction of noise to the system noticeably affects the said interplay giving rise to important characteristics in the manifestation of above properties. Only in case of DDP, the control of external photon energy also appears to be significant. On the whole, the study reveals that by delicate adjustment of several control parameters it is indeed feasible to fine-tune the noise-BE interplay and consequently the above three electrical properties of doped QD system..
Quantum dot, Binding energy, Stark shift, Static dipole polarizability, Dynamic dipole polarizability, Gaussian white noise.
Submitted at: Jan. 14, 2019
Accepted at: Aug. 20, 2019
AINDRILA BERA, ANUJA GHOSH, MANAS GHOSH, Role of noise-binding energy interplay on Stark shift and dipole polarizabilities of impurity doped quantum dots, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 7-8, pp. 499-504 (2019)
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