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Role of Pb additive in the density of localized states in a-Ge20Se80 glassy alloy

R. SINGH1, S. K. TRIPATHI2, S. KUMAR1,*

Affiliation

  1. Department of Physics, Christ Church College, Kanpur-208001, India
  2. Centre of Advanced study in physics, Panjab University, Chandigarh-160014, India

Abstract

The present paper reports the d. c. conductivity measurements at high electric fields in vacuum evaporated amorphous thin films of Ge20Se80 and (Ge20Se80)90Pb10 glassy alloys. Current-Voltage (I-V) Characteristics have been measured at various fixed temperatures. In these samples, at low electric fields, ohmic behavior is observed. However, at high electric fields (E~104V/cm), non ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level is calculated. An increase in DOS has been found when we incorporate Pb in the pure binary Ge20Se80 glassy system. The peculiar role of third element Pb as an impurity in the pure binary Ge20Se80 glassy alloy is also discussed..

Keywords

Thin films, Chalcogenide glasses, SCLC, DOS, Ge-Se.

Submitted at: March 23, 2007
Accepted at: July 15, 2007

Citation

R. SINGH, S. K. TRIPATHI, S. KUMAR, Role of Pb additive in the density of localized states in a-Ge20Se80 glassy alloy, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 7, pp. 1974-1978 (2007)