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Simulation of toggle mode switching in MRAM’S

C. S. OLARIU1,* , L. STOLERIU1, A. STANCU1

Affiliation

  1. Department of Solid State & Theoretical Physics, “Alexandru Ioan Cuza” University, Faculty of Physics, Blvd. Carol I, 11, 700506, Iasi, Romania

Abstract

The magnetization switching in Stoner-like magnetic particles is one of the fundamental issues in magnetic data storage. In develop of magnetoresistance random access memory (MRAM), the theoretical studies are now concentrated in various parameters improving. Some important parameters are the range of the operating field and the switching time. The writing mode proposed by Savtchenko and co-workers is known as the toggle MRAM or toggle write mode, is essentially based on a sequence of fields applied at 45° with respect to the easy axis of an antiferromagnetically coupled system of two single domain particles. We have recently analyzed systematically systems of two magnetic moments coupled with magnetostatic interactions. In this paper we are presenting the effect of the anisotropy of each material on the switching of a SAF in a toggle mode. For the uniaxial anisotropy type analytical approach is possible and simple results and critical curves are presented. For the more general case only the micromagnetic simulation can offer results. The studies are made for different coupling constants between the two ferromagnetic layers and the results are discussed..

Keywords

Magnetic memories, Toggle mode switching, LLG simulation.

Submitted at: Jan. 25, 2007
Accepted at: April 15, 2007

Citation

C. S. OLARIU, L. STOLERIU, A. STANCU, Simulation of toggle mode switching in MRAM’S, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 4, pp. 1140-1142 (2007)