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SiOx structural modifications by ion bombardment and their influence on electrical properties

A. MILELLA1, M. CREATORE1, M. C. M. VAN DE SANDEN1, N. TOMOZEIU2,*

Affiliation

  1. Department of Applied Physics, Equilibrium and Transport in Plasmas Group, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
  2. R&D Deparment, Océ Technologies B.V. , P.O. Box 101, 5900 MA Venlo, The Netherlands

Abstract

The effect of an Ar/O2 plasma treatment with additional ion bombardment delivered towards silicon suboxides layers has been investigated in terms of induced surface modifications, i.e., morphology, chemistry and electrical properties. Atomic Force Microscopy witnesses the smoothening of the silicon suboxide surface, dependent on the developed bias voltage at the substrate and the treatment time. Spectroscopic ellipsometry points out the optical properties of the modified surface: a thin silicon dioxide layer (5-17 nm) develops as a consequence of the surface process densification, also found to be dependent on the bias voltage and treatment time. Electrical properties (in terms of electric conductivity and layer capacity) are also reported on both the as deposited and ion bombarded samples..

Keywords

SiOx, Thin Films, Ion bombardment, Film densification.

Submitted at: Oct. 11, 2006
Accepted at: Nov. 2, 2006

Citation

A. MILELLA, M. CREATORE, M. C. M. VAN DE SANDEN, N. TOMOZEIU, SiOx structural modifications by ion bombardment and their influence on electrical properties, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2003-2010 (2006)