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Solid phase and ion beam epitaxial crystallization of Si implanted with Zn and Pb ions

CH. ANGELOV1,* , S. GEORGIEV1, B. AMOV1, V. MIKLI2, T. LOHNER3

Affiliation

  1. Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Centre for Materials Research, Tallin Technical University, Ehitajate 5, Tallin 79086, Estonia
  3. Research Institute for Technical Physics and Materials Science, Konkoly Thege Miklos ut 29-33, H-1121 Budapest, Hungary

Abstract

Rutherford backscattering spectroscopy in combination with channelling have been applied to investigate the surface structural changes of silicon implanted with low-soluble species (Zn and Pb) and subsequently thermally and ion beam annealed. For the fast diffusing Zn complete recrystallization during annealing of layers amorphized by ion implantation was observed, while for the slow diffusing Pb incomplete recrystallization took place. The results are discussed with respect to the corresponding experimental conditions..

Keywords

Ion implantation, Solid phase epitaxial crystallization, Impurity distribution.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

CH. ANGELOV, S. GEORGIEV, B. AMOV, V. MIKLI, T. LOHNER, Solid phase and ion beam epitaxial crystallization of Si implanted with Zn and Pb ions, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 311-314 (2007)