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Space charge limited conduction in a-Ge20Se80 and a-(Ge20Se80)95Ga5 glassy alloys

S. K. TRIPATHI1,* , ALKA MONGA1

Affiliation

  1. Department of Physics, Centre of Advanced Study in Physics, Panjab University, Chandigarh-160 014, India

Abstract

Trap depth and density can be determined from the analysis of the dependence of space charge limited currents (SCLC) on applied electric field. Thin films of a-Ge20Se80 and a-(Ge20Se80)95Ga5 have been deposited by thermal evaporation technique at a base pressure ~ 2×10-5 mbar and room temperature (300 K). Current (I)–Voltage (V) characteristics have been measured at different temperatures. These curves show nearly linear dependence at low voltages and afterwards a nonlinear behaviour at higher voltages. Detailed studies of I-V curves indicate the ohmic conduction at low voltages and trap limited SCLC at higher voltages. From fitting of the data, the density of defect states (DOS) near Fermi level is calculated..

Keywords

Ge-Se-Ga glasses SCLC, DOS, Traps.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

S. K. TRIPATHI, ALKA MONGA, Space charge limited conduction in a-Ge20Se80 and a-(Ge20Se80)95Ga5 glassy alloys, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3049-3053 (2007)