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Strain influence on crystallography of AgNbO3 – based thin films

MATJAZ VALANT1,* , ANNA-KARIN AXELSSON1, BIN ZOU1, NEIL ALFORD1

Affiliation

  1. London South Bank University, Centre for Physical Electronics and Materials, 103 Borough Road, SE1 0AA, London, UK

Abstract

AgNbO3 and (Ag0.9Li0.1)NbO3 thin films were grown on a LaAlO3 (001) single crystal substrate by the PLD technique. A crystallographic analysis of the films showed on a high epitaxial relationship with the substrate. High roughness and texturing of the surface shows that the island-growth mechanism was involved during the deposition. A stress-induced distortion of the thin-film unit cell dominates over a substitutionally induced distortion, which was expected from a doping with Li. A high-energy clamping of the substrate and the films results in a significant uniform in-plane compressive macrostrain with a high concentration of structural defects concentrating on the interface. The defects cause a microstrain to be anisotropically distributed and larger along the in-plane direction..

Keywords

AgNbO3, Thin films, Pulsed laser deposition, Crystallographic properties.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

MATJAZ VALANT, ANNA-KARIN AXELSSON, BIN ZOU, NEIL ALFORD, Strain influence on crystallography of AgNbO3 – based thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1377-1381 (2007)