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Stress, strain, and heterogeneous integration for III-V and II-VI compound semiconductor structures

M. GOORSKY1,* , S. HAYASHI1, A. NOORI1, C. MICLAUS1

Affiliation

  1. Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA

Abstract

The stresses and strains developed through heterogeneous integration of semiconductor structures represent engineering variables for which the materials limits must be addressed. The objective here is to engineer the stability of III-V and II-VI based wafer bond templates for subsequent epitaxial growth of device structures using non-compliant layers. Stress and strain are key parameters in the development of these structures. The difference in coefficients of thermal expansion between the handle substrate and the transferred and subsequently grown layers lead to high strains that can exceed critical thickness values. An empirical model is proposed to explain the experimental data for a series of different template layer / handle substrate combinations. The strain introduced during hydrogen implantation, which promotes exfoliation of a layer, also shows interesting materials-related trends, and the monitoring of the strain helps predict optimal transfer conditions. In both cases, the trends are consistent for a variety of compound semiconductor materials..

Keywords

Semiconductor structure, Heterogeneous integration, Stress and strain.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

M. GOORSKY, S. HAYASHI, A. NOORI, C. MICLAUS, Stress, strain, and heterogeneous integration for III-V and II-VI compound semiconductor structures, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1232-1236 (2007)