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Strong preferential (111) orientation of large-grained polycrystalline silicon thin films prepared by AIC

ZHENGXIA TANG1, HONGLIE SHEN1,* , LINFENG LU1, SHUGUANG SONG1, YUGANG YIN1, DAN LI1, HAIBIN HUANG1

Affiliation

  1. College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing, China

Abstract

Strong preferential (111) orientation polycrystalline silicon thin films were prepared on glass and quartz substrates by AIC process. Al and amorphous silicon layers were deposited by vacuum evaporation and r.f. magnetron sputtering respectively. The samples were annealed at 500 for several hours. The mechanism of preferential (111) orientation is suggested to be the integrative effect of naturally oxidization alumina membrane, high annealing temperature and quartz or glass substrates. The poly-Si is of large grains about 30-40 μm and high crystalline quality according to OTM and Raman spectra. The films are high p-type conduction with a resistivity of 6.9×10-2 Ω•cm..

Keywords

AIC process;, Polycrystalline silicon, Amorphous silicon, Preferential (111) orientation.

Submitted at: Feb. 12, 2008
Accepted at: June 9, 2008

Citation

ZHENGXIA TANG, HONGLIE SHEN, LINFENG LU, SHUGUANG SONG, YUGANG YIN, DAN LI, HAIBIN HUANG, Strong preferential (111) orientation of large-grained polycrystalline silicon thin films prepared by AIC, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 6, pp. 1515-1518 (2008)