"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Structural, electrical, and dielectric properties of sprayed tungsten-doped ZnO semiconductor

ELHACHEMI ZEHAR1,* , ABDALLAH OUERDANE2, BOUALEM CHETTI2, SAMIHA DERGAL3,4, TARIK OUAHRANI4, ALI ÇORUH5, YVES CAUDANO6

Affiliation

  1. Laboratory of Energy and Smart Systems, Faculty of Science and Technology, University of Khemis Miliana 44225, Algeria
  2. University of Khemis Miliana 44225, Algeria
  3. Hassiba Ben bouali University, Chlef 02000, Algeria
  4. Theoretical Physics Laboratory, Abou Bekr Belkaid University of Tlemcen 13000, Algeria
  5. Department of Physics 54147-Kampus Sakarya -Turkey
  6. Laboratory Laser and Spectroscopy (LLS) Namur University, Belgium

Abstract

The structural, morphological, electrical, and dielectric properties of non-doped ZnO as well as ZnO doped with tungsten were investigated using advanced techniques such as sensitive XRD, XPS spectroscopy techniques, and SEM microscopes. The findings demonstrate that the incorporation of tungsten as a dopant in ZnO leads to enhanced properties characterized by reduced grain size and improved crystal lattice structure. To analyze the electrical and dielectric properties, ohmic contacts on the ZnO interface junctions were established, allowing for comprehensive studies following surface rectification. The task was done by current-voltage (I - V), capacitance-voltage (C - V), conductance-voltage (σ - V), and the real ε' and imaginary ε'' components of the electrical permittivity across a range of voltages and frequencies. All these parameters were carried out using precise network analyzers, covering a voltage range of -6V to + 6V, and a frequency range of 10Hz to 10MHz. The obtained results exhibited outstanding performance, with activation energies measured at 0.49 eV, -0.83 eV, and 0.23 eV, respectively. Furthermore, we observed a significantly high permittivity value of 900 at low frequency, accompanied by distinct I-V characteristics. Notably, the I-V characteristic exhibited a notable increase at 0.6 volts, affirming the exceptional performance of tungsten-doped ZnO (WZO) and its suitability for a wide range of technological applications..

Keywords

Structural, Electrical, Dielectrical, Semiconductors.

Submitted at: March 9, 2023
Accepted at: Aug. 10, 2023

Citation

ELHACHEMI ZEHAR, ABDALLAH OUERDANE, BOUALEM CHETTI, SAMIHA DERGAL, TARIK OUAHRANI, ALI ÇORUH, YVES CAUDANO, Structural, electrical, and dielectric properties of sprayed tungsten-doped ZnO semiconductor, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 7-8, pp. 369-379 (2023)