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Structural investigation of Ge-As-Se glasses

M. V. POPOVYCH1,* , A. V. STRONSKI1, L. O. REVUTSKA2, K. V. SHPORTKO1, Y. POLISHCHUK1, O. P. PAIUK1, V. YU. GORONESKUL1

Affiliation

  1. V. Lashkaryov Institute of Semiconductor Physics NAS Ukraine, 41 Nauki Ave., 03028 Kyiv, Ukraine
  2. National Technical University of Ukraine,“Igor Sikorsky Kyiv Polytechnic Institute”, 37 Peremohy Ave., 03056 Kyiv, Ukraine

Abstract

In the present paper the amorphous Ge-As-Se alloys have been studied by X-ray diffraction and Raman spectroscopy. The experimental X-ray diffraction pattern confirmed an amorphous nature of studied samples. The obtained radial distribution functions have manifested the evolution of the short range in Ge-As-Se system. The positions of the nearest-neighbour bond length r1 changed from 2.32 to 2.45 Å with the increase of Ge content. Raman spectra of Ge-As-Se samples revealed that the backbones of the studied samples consist of AsSe3/2 pyramidal units, edge- and corner-shared GeSe4 tetrahedral units and structural units containing homopolar bonds. For Se-rich samples Se chains are present. Сompositional dependencies of characteristic constituent Raman bands intensities showed that Ge-As-Se samples contain different nanophases whose concentration is changing with the composition..

Keywords

Chalcogenide glasses, X-ray diffraction, Radial distribution function, Raman spectroscopy, Nanophases.

Submitted at: May 9, 2022
Accepted at: Feb. 14, 2023

Citation

M. V. POPOVYCH, A. V. STRONSKI, L. O. REVUTSKA, K. V. SHPORTKO, Y. POLISHCHUK, O. P. PAIUK, V. YU. GORONESKUL, Structural investigation of Ge-As-Se glasses, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 1-2, pp. 49-55 (2023)