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Structural properties and thermoelectric power of thermally evaporated InSbTe3 thin films

H. E. ATYIA1, A. M. A. EL-BARRY1,*

Affiliation

  1. Ain Shams University, Faculty of Education, Physics Department, Cairo, Egypt

Abstract

Stoichiometric thin films of different thickness (~ 50 - 150 nm) of InSbTe3 were prepared by thermally evaporated Technique, onto pre -cleaned glass substrates at ~298 K. The as deposited films were non-crystalline and the crystallinity was built on annealing at T ≥ 373 K .The analysis of X-ray data using a special computer program for unknown system confirmed that InSbTe3 compound has Orthorhombic structure with lattice constants a =16.39 ± 0.004 Å, b =10.21 ± 0.0063 Å, c = 3.98 ± 0.0019 Å, and cell volume ,V = 666.64 ± 0.0043 Å3. Both dark electrical resistivity ρ and thermoelectric power were measured in the temperature range (~303-423K). Seebeck coefficient was found to be positive all over the temperature range, indicating that InSbTe3 films are p-type semiconducting material. Also, the variation of the mobility with the temperature has been estimated. The results interpreted according to the grain boundary potential barrier model and the present of small polaron with energy,WP ~ 0.05 ± 0.009 eV ..

Keywords

Thin film, Thermal evaporation, Thermoelectric power, Seebeck activation energy.

Submitted at: May 9, 2006
Accepted at: June 15, 2007

Citation

H. E. ATYIA, A. M. A. EL-BARRY, Structural properties and thermoelectric power of thermally evaporated InSbTe3 thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 6, pp. 1890-1894 (2007)