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I agree, do not show this message again.Structural properties of poly-Si thin films grown on ZnO:Al coated glass substrates by aluminium induced crystallisation
D. DIMOVA-MALINOVSKA1,* , O. ANGELOV1, M. KAMENOVA1, A. VASEASHTAa2, J. C. PIVINb3
Affiliation
- Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
- Nanomaterial Processing &Characterization Laboratories, Marshall University, Huntington, WV, U.S.A.
- CSNSM, CNRS-IN2P3, Batiment 108, 91405 Orsay Campus, France
Abstract
The structural properties of poly-Si thin films on ZnO:Al coated glass substrates obtained by Aluminium-Induced Crystallisation (AIC) in different annealing atmospheres – air, N2, and N2 + H2, have been studied by Raman microprobe spectroscopy, optical microscopy , and X-ray diffraction . The Al, ZnO:Al and a-Si films were deposited by r.f. magnetron sputtering. Annealing in forming gas led to a better structural quality of the poly-Si films, compared to annealing in air or nitrogen. The investigation of different annealing conditions in forming gas led to the conclusion that the two-step annealing technique provided AIC poly-Si films with better crystalline properties. The results indicated that the process of AIC is suitable for the preparation of poly-Si films on ZnO:Al coated glass substrates, for solar cell applications..
Keywords
Poly-Si, ZnO, Structural properties, Raman spectroscopy.
Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007
Citation
D. DIMOVA-MALINOVSKA, O. ANGELOV, M. KAMENOVA, A. VASEASHTAa, J. C. PIVINb, Structural properties of poly-Si thin films grown on ZnO:Al coated glass substrates by aluminium induced crystallisation, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 355-358 (2007)
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