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Structural transition and intermediate (Boolchand) phase in amorphous thin films of the As2S3-GeS2 system

K. PETKOV1, M. POPESCU2,* , A. LŐRINCZI2, F. SAVA2, S. ZAMFIRA3, M. LEONOVICI4

Affiliation

  1. Central Laboratory of Photoprocesses of the Academy of Sciences of Bulgaria, Sofia, Bulgaria
  2. National Institute of Materials Physics, P. O. Box MG. 7, 077125 Magurele, Ilfov, Romania
  3. University “Transylvania” Dept. of Precision Mechanics and Mechatronics, 29 Bd. Eroilor, 5036-Brasov, Romania
  4. Physics Department, Faculty of Physics, University of Bucharest, Romania

Abstract

The structure of the chalcogenide glass films of composition As2S3-GeS2 has been investigated bu X-ray diffraction. The relation between the quasi-distance as evidenced from the first sharp diffraction peak, and the composition ration has been estabilished. The Boolchand (intermediate) phase was found ro be characterized by large structuro-compositional fluctuations..

Keywords

As2S3-GeS2, Boolchand phase, Amorphous films, FSDP, Structure.

Submitted at: July 5, 2007
Accepted at: Oct. 15, 2007

Citation

K. PETKOV, M. POPESCU, A. LŐRINCZI, F. SAVA, S. ZAMFIRA, M. LEONOVICI, Structural transition and intermediate (Boolchand) phase in amorphous thin films of the As2S3-GeS2 system, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3088-3092 (2007)