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Studies on current-voltage characteristics of ITO/(n)CdSe-Al heterojunctions

MOTHURA N. BORAH1,* , S. CHALIHA2, P. C. SARMAH3, A. RAHMAN4

Affiliation

  1. Deptt. of Physics, D.R. College, Golaghat-785621, India
  2. Department of Physics, Bahona College, Jorhat-785101, India
  3. Electronics Division, Regional Research Laboratory, Jorhat-785006, India
  4. Deptt. of Physics, Gauhati University, Guwahati-781014, India

Abstract

ITO/(n)CdSe heterojunction was fabricated by depositing Indium Tin Oxide (ITO) thin films onto n-type CdSe thin film by thermal evaporation method from pure ITO powder. The different diode parameters were calculated from the current-voltage characteristics of the junctions. The diode ideality factor was found to be greater than unity with high series resistance. The J-V characteristics under illumination showed poor photovoltaic effect of the junction. Large series resistance, high defect density and presence of interfacial layer are thought to be the main causes for higher value of diode ideality factor and poor photovoltaic conversion efficiency..

Keywords

Indium Tin Oxide, thermal evaporation, diode ideality factor, photovoltaic effect.

Submitted at: July 25, 2008
Accepted at: Oct. 7, 2008

Citation

MOTHURA N. BORAH, S. CHALIHA, P. C. SARMAH, A. RAHMAN, Studies on current-voltage characteristics of ITO/(n)CdSe-Al heterojunctions, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2793-2799 (2008)