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Study of copper diffusion under solvothermal conditions in In2S3 layers synthesized by spray pyrolysis

R. BANICA1,2, D. URSU1,2, T. NYARI1,2, P. SVERA2, N. VASZILCSIN1,*

Affiliation

  1. University Politehnica Timisoara, 2 Piata Victoriei, 300006 Timisoara, Romania
  2. National Institute for Research and Development in Electrochemistry and Condensed Matter, 144 Dr. A. Paunescu Podeanu Street, 300569, Timisoara, Romania

Abstract

CuInS2 is a good material for solar cells production with thin layer of absorbent due to its high light absorption coefficient and a band gap value close to 1.5 eV. Uncontrolled heating of CIS/In2S3 - type junction destroys the solar cell due to a diffusion of copper from the absorber layer. In this paper the influence of solvothermal reaction conditions such as solvent type, time and Cu+ concentration on copper diffusion in thin layers of In2S3 is presented. In a first step, In2S3 thin films were grown on glass at substrate temperatures of 320ºC and 380ºC using the ultrasonic spray pyrolysis method. The obtained layers were characterized by X-ray diffraction, scanning electron microscopy, scanning probe microscopy, absorption spectrometry and energy-dispersive X-ray spectroscopy. After that, In2S3 layers were subjected to the action of Cu+ ions at high temperature and pressure in an inert environment. The diffusion process can be controlled under solvothermal conditions. The reaction time and concentration of copper ions in solution have a strong influence on the optical properties of obtained layers. This method can lead to the production of solar cells based on p-CuInS2/n-In2S3 - type heterojunction..

Keywords

In2S3, Thin film, Solar cells, CuInS2.

Submitted at: April 9, 2015
Accepted at: June 24, 2015

Citation

R. BANICA, D. URSU, T. NYARI, P. SVERA, N. VASZILCSIN, Study of copper diffusion under solvothermal conditions in In2S3 layers synthesized by spray pyrolysis, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 7-8, pp. 1012-1020 (2015)