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Study of optical properties of vacuum evaporated Ge1-xSnxSe2.5 (x=0, 0.3, 0.5) thin films

DEEPIKA1,* , H. SINGH1, N. S. SAXENA2

Affiliation

  1. Dept. of Applied Sciences, The NorthCap University, Sector 23 -A, Gurugram, India
  2. Semiconductor and Polymer Science Lab., Dept. of Physics, University of Rajasthan, Jaipur, India

Abstract

Optical properties of Ge1-xSnxSe2.5 (x= 0, 0.3, 0.5) thin films have been studied using absorption and transmission spectra in range 400-1200 nm. Thermal evaporation technique has been used to deposit films onto cleaned glass substrate. Energy band gap has been determined using the absorption spectra while transmission spectra have been used to obtain refractive index and thickness of the films using the method proposed by Swanepoel. Other optical parameters i.e., extinction coefficients, band tail width, dielectric constant has also been evaluated. The studies show that refractive index increases while the band gap decreases with increase in Sn concentration..

Keywords

Chalcogenides, Glasses, Vacuum deposition, Thin films, Energy band gap.

Submitted at: June 7, 2018
Accepted at: Feb. 12, 2019

Citation

DEEPIKA, H. SINGH, N. S. SAXENA, Study of optical properties of vacuum evaporated Ge1-xSnxSe2.5 (x=0, 0.3, 0.5) thin films, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 1-2, pp. 108-113 (2019)