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Study of photoluminescence in gadolinium chloride treated porous silicon structures

R. JARIMAVIČIŪTĖ-ŽVALIONIENĖ1,2,* , S. TAMULEVIČIUS1,3, V. ANINKEVIČIUS4, V. GRIGALIŪNAS3, R. TOMAŠIŪNAS5

Affiliation

  1. Department of Physics, Kaunas University of Technology, Studentu 50, 51368 Kaunas, Lithuania
  2. Faculty of Technology, Kaunas College, Pramones str. 20, 50468 Kaunas, Lithuania
  3. Institute of Physical Electronics of Kaunas University of Technology, Savanoriu 271, 50131 Kaunas, Lithuania
  4. Semiconductor Physics Institute, A. Gostauto str. 11, LT-01108 Vilnius, Lithuania
  5. Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 10, 2040 Vilnius, Lithuania

Abstract

We report the study of photoluminescence in porous silicon treated with gadolinium chloride (GdCl3), and also in as grown porous silicon. The concentration of the gadolinium on the surface of the porous silicon was determined using an “Inductively Coupled Plasma Mass Spectrometer”. The photoluminescence measurements were carried out using a custom made system with a 300 nm light source. The photoluminescence intensity was enhanced drastically in GdCl3 treated porous silicon samples, and was a function of the gadolinium concentration in the porous silicon layer. However, the photoluminescence was quenched when the samples were left in room ambience for several months. The rate of quenching remained almost the same in gadolinium treated porous silicon and in the as grown samples..

Keywords

Porous silicon, Gadolinium doping, Photoluminescence.

Submitted at: Nov. 1, 2006
Accepted at: Jan. 15, 2007

Citation

R. JARIMAVIČIŪTĖ-ŽVALIONIENĖ, S. TAMULEVIČIUS, V. ANINKEVIČIUS, V. GRIGALIŪNAS, R. TOMAŠIŪNAS, Study of photoluminescence in gadolinium chloride treated porous silicon structures, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 1, pp. 162-165 (2007)