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Study of the ion implanted Fe depth distribution in Si after pulsed ion beam treatment

CH. ANGELOV1, S. GEORGIEV1,* , B. AMOV1, E. GORANOVA2, V. MIKLI3, I. DÉZSI4, E. KÓTAI4

Affiliation

  1. Institute for Nuclear Research and Nuclear Energy, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Centre for Materials Research, Tallinn Technical University, Ehitajate 5, Tallinn 79086, Estonia
  4. KFKI Research, Institute for Particle and Nuclear Physics, H-1525 Budapest P.O. Box 49, Hungary

Abstract

The behaviour of Fe implanted into Si(100) during subsequent pulsed ion - beam treatment (PIBT) has been studied. A two-step 56Fe+ ion implantation at energies of 60 and 20 keV and total doses of 1016 – 2x1017 cm-2 was used. As crystallization due to PIBT took place, Fe segregated towards the surface of the samples for the lower dose used (1016 cm-2) and diffusion into the bulk of the Si samples occured for higher doses (1x1017 cm-2 and 2x1017 cm-2). The Fe concentration profile was shifted rigidly, without Fe losses. Both the movement of the Fe layer and the maximum concentration of Fe in the Si crystallized region were characterized by Rutherford backscattering spectroscopy (RBS) in combination with channelling (RBS/C)..

Keywords

Fe+ implantation, Pulsed ion-beam treatment, Impurity distribution.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

CH. ANGELOV, S. GEORGIEV, B. AMOV, E. GORANOVA, V. MIKLI, I. DÉZSI, E. KÓTAI, Study of the ion implanted Fe depth distribution in Si after pulsed ion beam treatment, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 307-310 (2007)