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Study towards high efficiency CdS/CdTe solar cells

H. A. MOHAMED1,2,*

Affiliation

  1. Physics department, Faculty of Science, Sohag University, 82524 Sohag, Egypt.
  2. Physics department, Teachers College, King Saud University, 11148 Riyadh, KSA.

Abstract

The effect of CdS thickness and CdTe resistivity on short-circuit current, open-circuit voltage, fill factor and cell efficiency is studied in this work. The results have been carried out based on the optical losses (reflection and absorption) and recombination losses (front and back) under certain parameters of the absorber layer. It has been found that the optical losses decrease with reducing the thickness of CdS layer. At CdS thickness of 100 nm, the contribution of optical and recombination losses is about 35% where the recorded current density is 20.1 mA/cm-2. With further decrease in CdS thickness up to 70 nm, the short-circuit current density increases up to 21.1 mA/cm-2 where the contribution of these losses is about 32%. The output power, open-circuit voltage and fill factor of CdS/CdTe solar cell are determined from the J-V characteristic. It has been found that these parameters increase with decreasing the resistivity of CdTe absorber layer and thinning the CdS window layer. The maximum cell efficiency of 16.5 % is obtained at CdTe resistivity=0.1 Ω cm and CdS thickness=70 nm..

Keywords

Optical and recombination losses, CdTe resistivity, CdS thickness, CdS/CdTe solar cells efficiency.

Submitted at: Sept. 7, 2013
Accepted at: March 13, 2014

Citation

H. A. MOHAMED, Study towards high efficiency CdS/CdTe solar cells, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 333-339 (2014)