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Sublimation Epitaxy of AlN layers grown by different conditions on 4H-SiC substrates

M. BESHKOVA1,* , K. G. GRIGOROV1, Z. ZAKHARIEV2, M. ABRASHEV3, M. MASSI4, R. YAKIMOVA5

Affiliation

  1. Institute of Electronics-Bulgarian Academy of Sciences, 72, Blvd. Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
  2. Institute of General and Inorganic Chemistry-Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl. 11, 1113 Sofia, Bulgaria
  3. Faculty of Physics, Sofia University, 1164 Sofia, Bulgaria
  4. Technological Institute of Aeronautics, Plasmas and Processes Laboratory, 12228-900, S.J.Campos, Brazil
  5. Department of Physics Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden

Abstract

Epitaxial layers of aluminium nitride were grown at temperature 2100 oC on 10x10 mm2 4H-SiC substrates via a sublimation-recondensation method in an RF heated graphite furnace. The source material was polycrystalline sintered AlN. Growths of AlN layers in vacuum and pure nitrogen at 20 mbar were compared. MA maximum growth rate of 70 μm/h was achieved in a pure N2 atmosphere. The surface morphology reveals the hexagonal symmetry of the seeds, suggesting an epitaxial growth. This was confirmed by High-Resolution X-Ray Diffraction. The spectra showed a strong and well defined (0002) reflection positioned at 36.04o in a symmetric θ-2θ scan for both samples. Micro-Raman spectroscopy revealed that the films had a wurtzite structure. Rutherford Backscattering Spectrometry indicated the quality with a relative χmin parameter 0.68..

Keywords

AlN, Sublimation epitaxy, HRXRD, RBS.

Submitted at: Nov. 1, 2006
Accepted at: Jan. 15, 2007

Citation

M. BESHKOVA, K. G. GRIGOROV, Z. ZAKHARIEV, M. ABRASHEV, M. MASSI, R. YAKIMOVA, Sublimation Epitaxy of AlN layers grown by different conditions on 4H-SiC substrates, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 1, pp. 213-216 (2007)