Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
NINGYU REN1, JUN ZHU1,* , YANLAI WANG1, SHILIANG BAN1,*
- School of Physical Science and Technology, Inner Mongolia University, Key Laboratory of Semicon ductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, Hohhot 010021, PR Ch
Copper indium gallium selenide (Cu(In,Ga)Se2, CIGS) thin films were fabricated using radio frequency magnetron sputtering from a single quaternary ceramic target followed by the rapid thermal annealing treatment. The target was made of Cu2Se, Ga2Se3, and In2Se3 powder and Cu:In:Ga:Se=20:17.5:7.5:55 at%. By adopting a gradient sputtering power, i.e., a constant 45 W for the first 120 min and a step power from 45 to 50 W for the last 30 min, the films had a Cu-poor smooth surface and showed favorable chemical stoichiometry. After selenization, Cu/(In+Ga) ratio was examined as about 0.80-0.95 and Ga/(In+Ga) ratio about 0.20-0.30.
CIGS, Film, Quaternary target, RF magnetron sputtering, Tunable power.
Submitted at: Feb. 23, 2017
Accepted at: Feb. 12, 2018
NINGYU REN, JUN ZHU, YANLAI WANG, SHILIANG BAN, Surface modification of Cu(In,Ga)Se2 thin films by radio frequency magnetron sputtering with a gradient power, Journal of Optoelectronics and Advanced Materials Vol. 20, Iss. 1-2, pp. 78-83 (2018)
- Download Fulltext
- Downloads: 294 (from 194 distinct Internet Addresses ).