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ZENA E. SLAIBY1,* , ASMIET RAMIZY1
- Physics Department, University of Anbar, College of Sciences, Anbar, Iraq
GaN/ZnO nano-heterostructure ZnO and GaN nanofilms were grown on a silicon Si(111) substrate prepared through pulse laser deposition technique for ammonia (NH3) gas sensors. The structures of the GaN and ZnO layers were visualized using a field emission scanning electron microscope. The surface morphology of the thin GaN and ZnO nanofilms were characterized through atomic force microscopy. The films were extremely dense and have a smooth surface morphology. X-ray diffraction patterns showed crystallized hexagonal structures. The elemental compositions of the thin GaN and ZnO films were identified through energy dispersive X-ray analysis. The GaN/ZnO/Si composite exhibited excellent response as an ammonia gas sensor. The gas sensitivity of the gas sensor device for NH3 gas were measured as a function of concentration. Device sensitivity increased from 32.0904% to 50.08441%, and gas concentration increased from 500 ppm to 1500 ppm.
GaN/ZnO, Pulsed laser deposition, NH3 gas sensor.
Submitted at: Jan. 13, 2020
Accepted at: Oct. 22, 2020
ZENA E. SLAIBY, ASMIET RAMIZY, Synthesis of GaN/ZnO heterostructure thin film on silicon substrate by pulsed laser deposition for ammonia detection, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 9-10, pp. 510-517 (2020)
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