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Temperature dependence of current-voltage (I-V) characteristics of Pt/Au Schottky contacts on n-type GaN

M. RAVINANDAN1, P. KOTESWARA RAO1, V. RAJAGOPAL REDDY1,*

Affiliation

  1. Department of Physics, Sri Venkateswara University, Tirupati-517 502, India

Abstract

The current-voltage (I-V) characteristics of Pt/Au Schottky contact on n-type GaN were measured in wide temperature range 85-405 K. The I-V curves is fitted by the equation based on thermionic emission theory, but the zero-bias barrier height (φBO) decreases and the ideality factor (n) increases with decreasing temperature. The zero-bias barrier height (φBO), ideality factor (n) and series resistance (Rs) values are seen to be strongly temperature dependent. It is shown that the values of series resistances (Rs) were strongly temperature dependent and decreased with increasing temperature, and values were found in the range 1493 Ω at 85 K- 94 Ω at 405 K. The flat-band barrier height φBF (T=0 K) and temperature coefficient (α) are evaluated to be 0.71 eV and 1.91×10-3 eV/K by the current-voltage method. The calculated value of Richardson constant is 14.6 Acm-2K-2 from temperature dependent I-V studies, which is lower than the known value. It can be concluded that the temperature dependence of I-V characteristics of the Pt/Au/n-GaN Schottky diode can be successfully explained on the basis of thermionic emission (TE) mechanism..

Keywords

Temperature-dependent I-V characteristics; Pt/Au Schottky Contacts; n-type GaN; I-V technique.

Submitted at: March 12, 2008
Accepted at: Oct. 7, 2008

Citation

M. RAVINANDAN, P. KOTESWARA RAO, V. RAJAGOPAL REDDY, Temperature dependence of current-voltage (I-V) characteristics of Pt/Au Schottky contacts on n-type GaN, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2787-2792 (2008)