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Temperature dependent dark current-voltage study of thionine dye doped solid state photo electrochemical cell (PEC)

S. MAITY1, P. DALAPATI1, N. B. MANIK1,*

Affiliation

  1. Condensed Matter Physics Research Center, Department of Physics,Jadavpur University, Kolkata – 700032, India

Abstract

Solid state electrochemical systems doped with different dyes have been studied for their optoelectronic application possibilities. In the present study we have investigated the dark current-voltage property of Thionine dye dopes PEC in a range of temperature 251-329K to estimate the trap states of the system. The dark I-V characteristics suggest two distinct regions of current separated by transition voltage – below it, the current follow Ohmic nature and above it, current conduction is Space–Charge–Limited–Current (SCLC) controlled by exponentially distributed traps. The separation between conduction band (CB) edge (EC) and equilibrium Fermi level (EF0) for different bias voltages (below transition voltage) have been calculated from the Ohmic region for bias voltages of 0.6, 1.0, 1.5 and 2.0 Volts and a upward shifting of EF0 is found with increasing applied voltages. Values of the product of mobility and effective density of states at CB (µ0NC) have also been estimated for the said applied biases. From the slops of Current-voltage characteristics in SCLC region for different temperatures we have estimated characteristic energies for trap distribution at different temperatures. Results show that at low temperature trap density changes sharply with energy than that at high temperature..

Keywords

Temperature dependent Dark I-V; Thionine dye doped PEC; Band gap energy; Exponentially distributed traps;.

Submitted at: Nov. 13, 2012
Accepted at: Nov. 7, 2013

Citation

S. MAITY, P. DALAPATI, N. B. MANIK, Temperature dependent dark current-voltage study of thionine dye doped solid state photo electrochemical cell (PEC), Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 11-12, pp. 1417-1422 (2013)