"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

The effect of doping amount of Zn on the co-evaporated SnSe thin film for photovoltaic application

FEI ZHAO1,* , JUNHAO CHU2

Affiliation

  1. School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu, 213002, China
  2. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Abstract

In this work, SnSe thin films were prepared by co-evaporation method with different Zn doping amount, and the comparative studies were carried out. Experimental results indicate that the SnSe thin film with 0.285% Zn doping amount possesses higher electron mobility (32.69 cm2V-1s-1), lower resistivity (1.32 Ωcm), better crystalline, larger grain size, which promotes the efficiency improvement of the SnSe thin film solar cell. The efficiency of the SnSe device is improved to 0.55% by Zn doping. These results guide better growth of SnSe thin film and contribute to the development of the SnSe thin film solar cell..

Keywords

Zn doping, Co-evaporation, SnSe thin film, Solar cell.

Submitted at: Aug. 10, 2021
Accepted at: June 7, 2022

Citation

FEI ZHAO, JUNHAO CHU, The effect of doping amount of Zn on the co-evaporated SnSe thin film for photovoltaic application, Journal of Optoelectronics and Advanced Materials Vol. 24, Iss. 5-6, pp. 236-244 (2022)