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The effect of surface activation on electroless Ag(W) deposition

A. INBERG1, V. BOGUSH2, E. GINSBURG1, E. RABINOVICH1, N. CROITORU1,* , Y. SHACHAM-DIAMAND1

Affiliation

  1. Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv, Tel Aviv 69978, Israel
  2. Department of Protection of Information, Belarus State University of Informatics and Radioelectronics, 6, P. Brovka, Minsk 220013, Belarus

Abstract

Electroless Ag(W) films were deposited from the ammonia-acetic silver complex solution in 450 nm deep damascene channels with aspect ratio ranging from 1 to 2.5 activated either by Pd solution or by dry sputtered metal seed. A small addition of PEG-1500 (PEG with molecular weight of about 1500) to the electrolyte and lower deposition temperature were found to be necessary to achieve the homogeneous trench filling without voids or seam creation, which may contribute to increase resistivity of interconnect metallization. The effect of activation procedure on Ag(W) film: nucleation, electrical and mechanical properties, is shown. Thin metal seed instead of wet Pd activation, leads to: decrease of the film electroless deposition incubation period, conformal trench filling and low resistivity of sub-100 nm layers. Thin 60 nm Ag(W) films with resistivity value of about 2 µΩ⋅cm after vacuum annealing at 350 C for 2 h were obtained that makes them promising for future ULSI microelectronic application as conductive layers..

Keywords

Electroless deposition, Ag(W) film, Surface activation, Seed, resistivity, Trench filling.

Submitted at: Oct. 10, 2006
Accepted at: Nov. 2, 2006

Citation

A. INBERG, V. BOGUSH, E. GINSBURG, E. RABINOVICH, N. CROITORU, Y. SHACHAM-DIAMAND, The effect of surface activation on electroless Ag(W) deposition, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2035-2038 (2006)