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The effects of thermal treatments on microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics

A. IOACHIM1,* , L. NEDELCU1, E. ANDRONESCU2, S. JINGA2, M. I. TOACSĂN1, M. G. BANCIU1, A. LÖRINCZI1, M. POPESCU1

Affiliation

  1. National Institute of Materials Physics, P.O. Box MG-7, RO 077125, Bucharest-Magurele, Romania
  2. “Politehnica” University of Bucharest, P.O. Box , RO 011061, Bucharest, Romania

Abstract

Ba(Zn1/3Ta2/3)O3 (BZT) dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1550 ÷ 1650 oC for 2 h. XRD, SEM and EDX were employed for compositional, structural and morphological characterization. An additional annealing at 410 oC for 10 hours was performed in order to improve the dielectric parameters. The dielectric constant and quality factor of BZT dielectric resonators measured by using Hakki- Coleman method around 6 GHz was between 25 and 29. The temperature coefficient of the resonance frequency exhibits positive values less than 6 ppm/ oC. The best parameters of BZT dielectric resonators were achieved for the samples sintered at 1650 oC with additional thermal treatment (r = 29, Q x f = 100 THz)..

Keywords

Barium zinc tantalate, Thermal treatments, Microwave, BZT dielectric resonators.

Submitted at: Nov. 11, 2007
Accepted at: Jan. 18, 2008

Citation

A. IOACHIM, L. NEDELCU, E. ANDRONESCU, S. JINGA, M. I. TOACSĂN, M. G. BANCIU, A. LÖRINCZI, M. POPESCU, The effects of thermal treatments on microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 1, pp. 209-212 (2008)