"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

The influence of the deposition condition on crystal growth and on the band gap of CuSbS2 thin film absorber used for Solid State Solar Cells (SSSC)

S. A. MANOLACHE1,* , L. ANDRONIC1, A. DUTA1, A. ENESCA1

Affiliation

  1. The Centre: Product Design for Sustainable Energy, Transilvania University of Brasov, Eroilor 29, 500036, Brasov, Romania

Abstract

The paper discus the influence of the precursors weight ratio on the value of the CuSbS2 thin film band gap, used as absorber for solid state solar cells. The depositions were made by Spray Pyrolysis Deposition (SPD) using CuCl2 .2H2O, (CH3COO)3Sb, and H2NCSNH2 as precursors in 1: 2.57: 5. 71 - 1:6.86:5.71 weight ratio. The obtained films were analyzed via X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) current-voltage measurement recorded in dark and UVVIS Spectroscopy. It is observed that the precursors weight ratio of the films, influences not only the crystal growth but also the value of the CuSbS2 band gap..

Keywords

CuSbS2 absorber, Solid state solar cells, Thin films, Band gap.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

S. A. MANOLACHE, L. ANDRONIC, A. DUTA, A. ENESCA, The influence of the deposition condition on crystal growth and on the band gap of CuSbS2 thin film absorber used for Solid State Solar Cells (SSSC), Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1269-1272 (2007)