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The preparation of CuInSe 2 films by direct selenization of the CuIn oxides precursors

PAIFENG LUO1,* , YUANKUI DING1, ZHAOFAN LIU1, LI ZHOU1, YUEQIANG DIAO1

Affiliation

  1. Department of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, 2300 09 , P.R. China

Abstract

A low cost non vacuum process for the deposition of CuInSe 2 ( films is reported in this work. First, Cu In oxides precursors are prepared by the traditional grinding method. Second, the precursor layers are deposited via spin coating from oxides slurry. Finally, CIS films are achieved after direct selenization reaction without the complicated hydrogen reduction process. The desired near stoichiometric CIS films with up to micron scaled grain size show the dominant chalcopyrite structure wi th preferred (112) orientation by XRD, Raman spectra, SEM and XRF. A band gap about 1.0 eV and an absorption coefficient exceeding 105 cm-1 are also obtained by absorption spectroscopy measurement in our study..

Keywords

CIS films, Solid state reaction, Spin coating, Selenization.

Submitted at: June 27, 2013
Accepted at: March 13, 2014

Citation

PAIFENG LUO, YUANKUI DING, ZHAOFAN LIU, LI ZHOU, YUEQIANG DIAO, The preparation of CuInSe 2 films by direct selenization of the CuIn oxides precursors, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 317-321 (2014)