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The ratio of the contributions and activation energies to phosphorus diffusion from doubly negatively charged and triply negatively charged vacancies in germanium

A. SOUIGAT1,* , K. E. AIADI2, B. DAOUDI2

Affiliation

  1. Univ Ouargla , Fac. des Mathématiques et des Sciences de la Matière, Lab. Développement des énergies nouvelles et renouvelables dans les zones arides et sahariennes (LENREZA).Ouargla 30 000
  2. Univ Ouargla , Fac. des Mathématiques et des Sciences de la Matière, Lab. Développement des énergies nouvelles et renouvelables dans les zones arides et sahariennes (LENREZA).Ouargla 30 000.

Abstract

Recently germanium has emerged as a promising candidate for the development of high performance devices (CMOS) and its optoelectronic applications. Knowing the parameters of the dopant diffusion in this material is essential to perform efficient Ge-Based devices. This study determine how the temperature dependence of the ratio of the contributions to phosphorus diffusion in germanium from doubly negatively charged (2-) and triply negatively charged (3-) vacancies with activation energies 3.09 eV and 2.4 eV, respectively. In this work we modulate phosphorus diffusion in Ge by the vacancy mechanism and numerical solution of Fick’s second law, taking into account the dependence of the effective diffusion coefficient on the ratio of the contributions, and we simulate the experimental P diffusion profiles in Ge..

Keywords

Germanium, Phosphorus, Diffusion, Ratio of contributions, Vacancy mechanism, Activation energies.

Submitted at: April 5, 2015
Accepted at: June 24, 2015

Citation

A. SOUIGAT, K. E. AIADI, B. DAOUDI, The ratio of the contributions and activation energies to phosphorus diffusion from doubly negatively charged and triply negatively charged vacancies in germanium, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 7-8, pp. 1070-1074 (2015)