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The role of high-energy electron irradiation induced defects in some mechanical properties of Si-SiO2 structures

S. KASCHIEVA1,* , K. CHRISTOVA1, I. BORADJIEV1, A. PETROVA2, J. KOPRINAROVA1, S. N. DMITRIEV3

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Space Research Institute, Bulgarian Academy of Sciences, 6 Moskovska St., 1000 Sofia, Bulgaria
  3. Joint Institute of Nuclear Research, Flerov Laboratory of Nuclear Reactions Dubna, Moscow region 141980, Russia

Abstract

The mechanical stress produced by 23 MeV energy electron radiation in both n- and p-type Si-SiO2 structures is studied as a function of the dose. Low dose electron irradiation (2,4 – 4,8x1014 cm-2) increases significantly the yield stress for n-type Si-SiO2 samples, but to a much lesser extent for p-type ones. The nanohardness of irradiated structures is measured using the sclerometry method. Our results show that the nanohardness increases with the dose in the same manner for both groups studied. The values are very close, but for p-type samples are consistently higher. The variations of both the stress and nanohardness are remarkable at low doses. These mechanical properties of the irradiated samples are discussed on the basis of radiation induced defects..

Keywords

Thin films, Electron irradiation, Mechanical stress, Nanohardness.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

S. KASCHIEVA, K. CHRISTOVA, I. BORADJIEV, A. PETROVA, J. KOPRINAROVA, S. N. DMITRIEV, The role of high-energy electron irradiation induced defects in some mechanical properties of Si-SiO2 structures, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 394-397 (2007)