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E. CHAN Y DÍAZ1,2, M. ACOSTA3, R. CASTRO-RODRÍGUEZ2, A. IRIBARREN2,4,*
- Departamento de Ingeniería Mecánica, Instituto Tecnológico de Mérida, Av. Tecnológico km. 4.5 s/n, 97118, Mérida, Yucatán, México
- Department of Applied Physics, CINVESTAV-IPN, Unidad Mérida, Km. 6 Antigua carretera a Progreso, Apdo. Postal 73, Cordemex, 97310, Mérida, Yuc., México
- Materials Science Laboratory, Faculty of Engineering, University of Yucatan, CP 97130 Mérida, Yuc., México
- Instituto de Ciencia y Tecnología de Materiales (IMRE), Universidad de La Habana, Zapata y G, Vedado, La Habana 10400, Cuba
ZnO thin films were deposited by the pulsed laser deposition technique under relatively low partial oxygen pressures between the minimum given under base vacuum and 5.33 Pa on glass substrates. The effects of the partial O pressure (pO) within the chamber during the deposition on the structural and electrical properties were investigated. It was found preferential growth on the c axis. The (002) peak position moves from left to right of the ZnO powder pattern (002) peak. It is associated to the O vacancy passivation and the interstitial O formation as pO increases which induces the c lattice parameter diminishes. The grain size asymptotically increases up to a value D 26 nm as pO increases. The ZnO film resistivity decreases with pO, which is opposite to that expected. This controversial behavior was explained from the compensation of oxygen vacancy passivation and the predominance of interstitial configurations of oxygen plus interstitial Zn over p-type defects as antisite Zn atoms and Zn vacancies during the nucleation in the films. Such the assumption agrees and is validated by the diminishing of the c lattice parameter as a function of the pO increasing..
ZnO, Laser deposition, Electrical resistivity, Defects, Interstitials.
Submitted at: May 10, 2016
Accepted at: Aug. 9, 2017
E. CHAN Y DÍAZ, M. ACOSTA, R. CASTRO-RODRÍGUEZ, A. IRIBARREN, The role of interstitial oxygen on the structural and electrical properties of ZnO film grown by the pulsed laser deposition technique, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 7-8, pp. 506-510 (2017)
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