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The study of the influence of Al and Sn doping on the optical and electrical properties of ZnO thin films

P. PREPELITA1, C. BABAN1, F. IACOMI1,*

Affiliation

  1. Al.I. Cuza University, Faculty of Physics, 11 Carol I Blvd., 700506, Iasi Romania

Abstract

ZnO thin films on glass substrates were obtained by thermal oxidation of vacuum evaporated Zn films. The evaporated metalic films with Al/Zn, Sn/Zn and (Al+Sn)/Zn in different weight ratios were annealed for 2 h at 450oC to obtain Al-doped, Sn-doped and Al+Sn–doped ZnO films. The optical properties, evaluated by UV-VIS (350-1300 nm) showed that the obtained thin films were highly transparent, with a transmission coefficient between 65 – 90 % depending on the dopant type and the ammount of doping. For the same ammount of doping the electrical resistivity of Al doped films is lower than for Sn doped films but in both cases it is higher than the electrical resistivity of Al, Sn - doped films..

Keywords

ZnO, thin films, TCO, Doping.

Submitted at: March 4, 2007
Accepted at: July 15, 2007

Citation

P. PREPELITA, C. BABAN, F. IACOMI, The study of the influence of Al and Sn doping on the optical and electrical properties of ZnO thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 7, pp. 2166-2169 (2007)