Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
Y. YILDIZ1, K. BILEN1, M. BOSI2, A. YILDIZ3,*
- Department of Mechanical Engineering, Faculty of Engineering and Natural Sciences, Ankara Yıldırım Beyazıt University, Ankara, Turkey
- CNR-IMEM Institute, Area delle Scienze 37/A, I-43124, Parma, Italy
- Department of Energy Systems Engineering, Faculty of Engineering and Natural Sciences, Ankara Yıldırım Beyazıt University, Ankara, Turkey
We investigated the application of undoped and Si-doped GaAsN samples grown by a metal organic vapor phase epitaxy (MOVPE) technique on semi-insulating (SI) and n-type GaAs substrates as a novel thermoelectric material. The structural and optical properties of the samples were characterized by XRD and photoluminescence (PL) measurements, respectively. Hall effect measurements were made as a function of temperature. The effects of the layer structure and growth conditions of the samples on the thermoelectric performance of GaAsN were demonstrated by obtaining values of the power factor (PF). The results show that Si doping has a substantial influence on the PF of GaAsN, indicating that Sidoped GaAsN might be a promising candidate for thermoelectric energy harvesters..
GaAsN; MOVPE; Power factor; Thermoelectric properties.
Submitted at: Jan. 22, 2018
Accepted at: Oct. 10, 2018
Y. YILDIZ, K. BILEN, M. BOSI, A. YILDIZ, The thermoelectric power factor enhancement of GaAs1-xNx, Journal of Optoelectronics and Advanced Materials Vol. 20, Iss. 9-10, pp. 515-519 (2018)
- Download Fulltext
- Downloads: 299 (from 202 distinct Internet Addresses ).