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The time-of-flight photocurrent analysis revisited

M. BRINZA1,* , G. J. ADRIAENSSENS2

Affiliation

  1. Utrecht University, SID – Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
  2. Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium

Abstract

While the time-of-flight (TOF) photoconductivity experiment was mainly designed to measure the drift mobility and the mobility-lifetime products of both electrons and holes in disordered semiconductors, it has also been used extensively to model the distribution of tail states in the amorphous semiconductors. In general however, such modelling made use of part of the experimental data only, and often relied on crude approximations in its theoretical analysis. Therefore, by using the complete TOF signal, and by matching it to the best available theoretical description of the TOF process, a much better determination of the tail state distributions and other localised states in the gap can now be achieved..

Keywords

Time-of-flight photocurrents, Amorphous semiconductors, Density of states, Multiple-trapping transport, Drift mobility, Analytical modelling.

Submitted at: Oct. 16, 2006
Accepted at: Nov. 2, 2006

Citation

M. BRINZA, G. J. ADRIAENSSENS, The time-of-flight photocurrent analysis revisited, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2028-2034 (2006)