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Theoretical and experimental analysis of MgF2 crystal growth

E. A. GARIBIN1,* , A. A. DEMIDENKO1, I. A. MIRONOV1, A. N. VOROBEV1, V. N. VASILIEV2, S. A. CHIVILIKHIN2

Affiliation

  1. INCROM LTD, 36 Babushkina Ul, 193171 St. Petersburg, Russia
  2. Computer Technology Department, Saint-Petersburg State University of Information Technologies, Mechanics and Optics, 14 Sablinskaya Ul, 197101 St. Petersburg, Russia

Abstract

Magnesium fluoride crystal growth is studied in a closed graphite chamber. The raw material located at the chamber bottom is kept at temperature higher than MgF2 melting point (1550 K) and evaporated at reduced pressures ranging from 0.1 to 1.0 Pa. MgF2 crystal growth occurs on the chamber top at temperatures varied from 1324 to 1374 K. Diaphragms with hole of various diameters are mounted at a certain distance from material source for controlling the growth rate and the crystal shape. A simplified model based on experimental observations [3] is suggested for describing the process. Theoretical analysis shows that the growth rate monotonically increases with the temperature drop for large holes, while small diameters lead to a decrease in the growth rate at high temperature drops due to MgF2 losses on the diaphragm. Our computations predict 0.8-1.2 mm/h of crystal growth under operating conditions considered. This is consistent with experiments where magnium fluoride crystals (110) are obtained as disks of 100 mm diameter and 10 mm thickness [3]..

Keywords

Computer simulation, Growth models, Growth from vapor.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

E. A. GARIBIN, A. A. DEMIDENKO, I. A. MIRONOV, A. N. VOROBEV, V. N. VASILIEV, S. A. CHIVILIKHIN, Theoretical and experimental analysis of MgF2 crystal growth, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1314-1316 (2007)