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Thermally induced changes on the electrical and optical properties of nanocrystalline CdSe thin films

JEEWAN SHARMA1, G. S. S. SAINI1, N. GOYAL1, S. K. TRIPATHI1,*

Affiliation

  1. Department of Physics, Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160 014, India

Abstract

The present paper reports the electrical and optical properties on nanocrystalline CdSe (n-CdSe) thin films before and after thermal treatment. The absorption coefficient (α) and band gap (Eg) are calculated using transmission curves. The crystallite size is calculated using XRD and also from the measured band gap shift with respect to bulk value. The dark conductivity (σd) measurements indicate that the conduction in this material is through an activated process having single activation energy in the investigated temperature range (253–370 K). Steady state photoconductivity (σph) measurements are done as a function of temperature and intensity. Results show that the above properties change drastically after the thermal treatment..

Keywords

CdSe thin films, Nanocrystalline, Optical properties, Photosensitivity, Photoconductivity.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

JEEWAN SHARMA, G. S. S. SAINI, N. GOYAL, S. K. TRIPATHI, Thermally induced changes on the electrical and optical properties of nanocrystalline CdSe thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3194-3199 (2007)