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Thickness dependence of crystallization process for hydroxyapatite thin films

I. MERCIONIU1, S. CIUCĂ2, I. PASUK1, A. SLAV1, C. MOROŞANU1,* , M. BERCU3

Affiliation

  1. National Institute of Materials Physics, Bucharest, Măgurele, Romania
  2. University Politehnica of Bucharest, Materials Science Engineering, Bucharest, Romania
  3. Bucharest University, Faculty of Physics, Magurele, Romania

Abstract

Hydroxyapatite (HAP) thin films (0.2 μm, 0.3 μm and 1.2 μm thickness) were grown by RF magnetron sputtering in argon atmosphere onto silicon substrates at high deposition rates (0.6 μm/h). Crystalline HAP films were obtained using a low temperature (100 °C) followed by post-deposition annealing at 300 oC, 450 oC, 500 oC and 550 °C in environmental air for 1 hour. An important influence of the films thickness upon the crystallization degree was noticed at intermediate annealing temperatures, as obtained from XRD measurements. For low and high temperatures similar values were obtained with a better crystallization degree for the thinner films. FTIR absorption led to the same conclusion considering the shape of stretching and bending PO4 lines. This suggests that the crystallization process has a diffusion component besides usual thermal activation process..

Keywords

Hydroxyapatite thin films, Biocompatible and Bioactive coatings, Radio-frequency magnetron sputtering, Crystallization process, Vapour diffusion.

Submitted at: Oct. 10, 2006
Accepted at: Aug. 18, 2007

Citation

I. MERCIONIU, S. CIUCĂ, I. PASUK, A. SLAV, C. MOROŞANU, M. BERCU, Thickness dependence of crystallization process for hydroxyapatite thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 8, pp. 2535-2538 (2007)