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Transient simulations of a rapid thermal processing apparatus

P.-O. LOGERAIS1,* , D. CHAPRON1, A. BOUTEVILLE1

Affiliation

  1. LPMI, ENSAM, Angers, France Annealsys, Montpellier, France

Abstract

RTP (Rapid Thermal Processing) is a wide-spread technology to manufacture advanced semiconductors. It is used for oxidation, annealing, silicide formation and chemical vapour deposition. Numerical simulation is an essential step in order to have a better understanding of the Rapid Thermal Process. A preliminary work showed the influence of the quartz window on the wafer temperature profile. In the present study, a RTP reactor is modelled in two dimensions in order to analyse the wafer temperature evolution for a constant lamp heating power. Transient-state numerical simulations are then carried out, in which the radiative heat transfer equation is solved with the Monte-Carlo method. First, the general evolution of the wafer temperature is described. It can be subdivided into three different phases: a rapid increase, a slower one and the stabilisation. In the second part, the evolution of the centre to edge difference of temperature is analysed. An inversion of the wafer temperature profile occurs at the beginning of the heating and the maximal centre to edge difference of temperature is obtained when the steady-state has been reached. In both the parts, the corresponding evolution of the quartz window temperature is presented. A correlation between the wafer temperature evolution and the quartz window one is shown..

Keywords

RTP, Numerical simulation, Wafer temperature uniformity, Quartz window, Rapid thermal processing.

Submitted at: Nov. 2, 2006
Accepted at: April 15, 2007

Citation

P.-O. LOGERAIS, D. CHAPRON, A. BOUTEVILLE, Transient simulations of a rapid thermal processing apparatus, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 4, pp. 1082-1086 (2007)