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XPS characterization of thin ZrO2 and (ZrO2)x(Al2O3)1-x films deposited on silicon

P. VITANOV1,* , A. TSANEV2, P. STEFANOV2, A. HARIZANOVA1, T. IVANOVA1

Affiliation

  1. Central Laboratory of Solar Energy and New Energy Sources – BAS, Blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria
  2. Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str. Bl. 11, 1113 Sofia, Bulgaria

Abstract

The study deals with thin films of zirconia (ZrO2) and (ZrO2)X(Al2O3)1-X, deposited on silicon substrates, using the chemical solution deposition method. The thin films were obtained by spin coating, followed by firing at 350oC/30 min and high temperature annealing at 750oC/60 min. Both compositional and chemical bonding data were obtained from X-ray Photoelectron Spectroscopy (XPS). XPS analysis shows the presence of carbon impurities only on the film surface. XPS spectra of a pure ZrO2 film revealed Zr3d5/2 and O1s peaks, characteristic of fully oxidized Zr atoms. A negligible amount of Si atoms was detected in the surface region. The deposition of (ZrO2)X(Al2O3)1-X films led to the formation of a pseudobinary alloy. The XPS spectra showed a Zr3d5/2 peak at 183.5 eV and an Al 2p peak at 74.4 eV, attributed to photoemission from the ZrO2 and Al2O3, respectively. An increased amount of Si atoms in the (ZrO2)X(Al2O3)1-X layers was observed in comparison to the ZrO2 film..

Keywords

ZrO2, (ZrO2)x(Al2O3)1-x, Metal oxides, Thin films, XPS study.

Submitted at: Nov. 3, 2006
Accepted at: Feb. 15, 2007

Citation

P. VITANOV, A. TSANEV, P. STEFANOV, A. HARIZANOVA, T. IVANOVA, XPS characterization of thin ZrO2 and (ZrO2)x(Al2O3)1-x films deposited on silicon, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 256-259 (2007)