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XRD and Raman spectroscopic study of Ru and Os doped Bi12SiO20 crystals

T. I. MILENOV1,* , P. M. RAFAILOV1, A. V. EGORYSHEVA2, V. M. SKORIKOV2, R. PETROVA3, M. N. VELEVA1, T. D. DUDKINA2, C. THOMSEN4, A. YA. VASILEV2, M. M. GOSPODINOV1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. N.S.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 31 Leninskii Prospekt, GSP-1, 119991 Moscow, Russia
  3. Central Laboratory of Mineralogy and Crystallography, Bulgarian Academy of Sciences, 107 Acad. G. Bonchev str., Sofia 1113, Bulgaria
  4. Institut für Festkörperphysik der Technischen Universität Berlin, Sekr. PN 5-4, Hardenbergstr. 36, D-10623 Berlin, Germany

Abstract

Single crystals of Bi12SiO20 doped with Ru and Os (BSO:Ru and BSO:Os) with diameters of about 40 mm and lengths of 80- 100 mm were grown by the Czochralski method. Slices of these crystals were studied by polarized Raman spectroscopy. Two-dimensional defects (probably stacking faults) were observed in the central core area of the BSO:Ru crystal by X- ray double crystal traverse topography, while the BSO:Os crystal was probably free of this defect. The specimens from the central part of the ingots were also investigated by single crystal X- ray diffractometry. Conclusions about the crystal perfection based on the research findings, were made..

Keywords

Crystal growth, Lattice defects, X- ray diffraction methods, Raman spectroscopy.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

T. I. MILENOV, P. M. RAFAILOV, A. V. EGORYSHEVA, V. M. SKORIKOV, R. PETROVA, M. N. VELEVA, T. D. DUDKINA, C. THOMSEN, A. YA. VASILEV, M. M. GOSPODINOV, XRD and Raman spectroscopic study of Ru and Os doped Bi12SiO20 crystals, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 293-295 (2007)