L. S. CHUAH^1,* , Z. HASSAN¹, S. S. TNEH¹

Abstract

Zinc thin films were deposited onto porous silicon (PSi) substrates by dc sputtering using a Zn target. These films were then annealed under flowing (6 L min-1) oxygen gas environment in the furnace at 600 ºC for 2 hours. Porous silicon is used as an intermediate layer between silicon and ZnO films and it provides a large area composed of an array of voids. The PSi samples were prepared using photoelectrochemical method on n-type silicon wafer with (111) and (100) orientation. To prepare porous structures, the samples were dipped into a mixture of HF:Ethanol (1:1) for 5 minutes with current densities of 50 mA/cm 2 , and subjected to external illumination with a 500W UV lamp. The surface morphology and the nanorods structure of the ZnO films were characterized by scanning electron microscope (SEM) and high resolution X-ray diffraction (HR-XRD). We synthesized the ZnO nanorods with diameter of 80-100 nm without any catalysts or templates. XRD pattern confirmed that the ZnO nanorods were of polycrystalline structure in nature with a hexagonal close packed lattice and c-axis oriented perpendicular to the substrate surface..

Keywords

Porous silicon, ZnO, Sputtering, SEM, XRD.

Submitted at: Oct. 12, 2009
Accepted at: Nov. 19, 2009

Citation

L. S. CHUAH, Z. HASSAN, S. S. TNEH, Zinc oxide nanorods on porous silicon/silicon substrates, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1637-1640 (2009)

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