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Page 1 of 3.
- Photon effects in chalcogenide glasses
K. SHIMAKAWA
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 2973-2978 (2007) - Intermediate phases in binary and ternary alloys. How far can we go with a semi-empirical bond-constraint theory?
G. LUCOVSKY , D. A. BAKER , M. A. PAESLER , J. C. PHILLIPS , M. F. THORPE
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 2979-2988 (2007) - Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7
M. A. PAESLER , D. A. BAKER , G. LUCOVSKY , P. C. TAYLOR , J. S. WASHINGTON
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 2996-3001 (2007) - Some optical and recording properties of composite material As2S3-PVP
A. ANDRIESH , A. MESHALKIN , S. BUZURNIUC , V. VERLAN
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3002-3006 (2007) - Diffraction optical structures on the basis of chalcogenide glasses and polymers
A. ANDRIESH , S. SERGHEEV , G. TRIDUH , A. MESHALKIN
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3007-3012 (2007) - Radiative lifetime of excitons in chalcogenide glasses
JAI SINGH
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3013-3020 (2007) - A new version of the RMC++ Reverse Monte Carlo programme, aimed at investigating the structure of covalent glasses
O. GEREBEN , P. JÓVÁRI , L. TEMLEITNER , L. PUSZTAI
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3021-3027 (2007) - Molecular dynamics simulations of liquid GeSe alloy: the first application of Modified Analytic Embedded Atom Method (MAEAM)
S. SENTURK DALGIC , S. SENGUL
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3028-3034 (2007) - The changing of initial state in a strong electric field and memory effect in chalcogenides
K. D. TSENDIN
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3035-3038 (2007) - Effect of indium incorporation on the physical parameters of Ge-Se glassy alloy
ISHU , S. K. TRIPATHI , P. B. BARMAN
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3039-3043 (2007) - AC conductivity in a-GeSePb glassy alloys
GURINDER SINGH , N. GOYAL , G. S. S. SAINI , S. K. TRIPATHI
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3044-3048 (2007) - Space charge limited conduction in a-Ge20Se80 and a-(Ge20Se80)95Ga5 glassy alloys
S. K. TRIPATHI , ALKA MONGA
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3049-3053 (2007) - Equilibrium structure of germanium sulfur GenSm clusters
S. SENTURK DALGIC , M. CALISKAN
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3054-3063 (2007) - Selenium ruby lead-free high refractive index glass prepared from local sand
P. DARARUTANA , N. SIRIKULRAT
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3061-3063 (2007) - Influence of silver concentration in Agx(Sb0.40S0.60)100-x thin amorphous films on photoinduced crystallization
J. GUTWIRTH , T. WÁGNER , P. BEZDIČKA , E. KOTULÁNOVÁ , MIL. VLČEK , S. O. KASAP , M. FRUMAR
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3064-3071 (2007) - Tailoring copper sulfide thin films morphology using spray pyrolysis deposition technique
L. A. ISAC , A. DUTA , M. NANU , J. SCHOONMAN
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3072-3075 (2007) - Changes of sulphide glasses caused by the presence of As
J. KALUŽNÝ , J. PEDLÍKOVÁ , J. ZAVADIL , V. LABAŠ
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3076-3078 (2007) - FSDP-related correlations in chalcogenide glasses
T. KAVETSKYY , O. SHPOTYUK , M. POPESCU , A. LORINCZI , F. SAVA
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3079-3081 (2007) - Electrical and dielectrical properties of As – Se – Te glasses
M. KUBLIHA , J. KALUŽNÝ , J. PEDLIKOVÁ , J. ZAVADIL , V. LABAŠ
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3082-3087 (2007) - Structural transition and intermediate (Boolchand) phase in amorphous thin films of the As2S3-GeS2 system
K. PETKOV , M. POPESCU , A. LŐRINCZI , F. SAVA , S. ZAMFIRA , M. LEONOVICI
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3088-3092 (2007) - Physico-chemical properties of Ge-Te-Ga glasses
P. PETKOV , P. ILCHEV , V. ILCHEVA , T. PETKOVA
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3093-3096 (2007) - Phase transition in Se-Te thin film on UV illumination
V. SHARMA , A. THAKUR
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3097-3099 (2007) - Study of the structural units in some chalcogenides of the As−Sb−S−Se−I system by X-ray and DSC analysis
F. SKUBAN , S. R. LUKIĆ , D. M. PETROVIĆ , I. O. GÚTH , G. R. ŠTRBAC
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3100-3102 (2007) - High-temperature Raman and DSC studies of ternary floppy chalcogenide glasses
E. STAVROU , V. ADAMAKI , G. SOTIRIOU , S. KRIPOTOU , C. RAPTIS
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3103-3107 (2007) - Giant photo- and thermo-induced effects in chalcogenides
E. VATEVA
Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3108-3114 (2007)
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