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I agree, do not show this message again.Vol. 8, Number 6, Issue December 2006, Year 2006
Page 1 of 2.
- Reduction of defects by network self-organizations in non-crystalline dielectrics and semiconductors: a tribute to Professor Radu Grigorovici on the occasion of his 95th birthday
G. LUCOVSKY , J. C. PHILLIPS
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 1969-1978 (2006) - Light-induced structural changes in hydrogenated amorphous silicon
T. A. ABTEW , D. A. DRABOLD
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 1979-1988 (2006) - Heterojunctions of hydrogenated amorphous silicon and monocrystalline silicon
W. FUHS , L. KORTE , M. SCHMIDT
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 1989-1995 (2006) - The effect of light induced degradation on the sensitization phenomenon in a-Si:H
I. BALBERG , Y. DOVER
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 1996-2002 (2006) - SiOx structural modifications by ion bombardment and their influence on electrical properties
A. MILELLA , M. CREATORE , M. C. M. VAN DE SANDEN , N. TOMOZEIU
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2003-2010 (2006) - A story of silicon, soap and serendipity
DENIS WEAIRE
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2011-2014 (2006) - Dynamic response of a coupled-cavities one-dimensional photonic crystal in the femtosecond regime
A. BELARDINI , O. BUGANOV , G. LEAHU , A. BOSCO , M. CENTINI , E. FAZIO , C. SIBILIA , M. BERTOLOTTI , S. ZHUKOVSKY , S. V. GAPONENKO
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2015-2017 (2006) - Energy density of the cubic and spherical cavities with low adiabatic invariant
V. I. VLAD , N. IONESCU-PALLAS
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2018-2023 (2006) - A many-body theory of conduction in electron glasses
M. POLLAK
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2024-2027 (2006) - The time-of-flight photocurrent analysis revisited
M. BRINZA , G. J. ADRIAENSSENS
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2028-2034 (2006) - The effect of surface activation on electroless Ag(W) deposition
A. INBERG , V. BOGUSH , E. GINSBURG , E. RABINOVICH , N. CROITORU , Y. SHACHAM-DIAMAND
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2035-2038 (2006) - EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5
M. A. PAESLER , D. A. BAKER , G. LUCOVSKY , A. E. EDWARDS , P. C. TAYLOR
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2039-2043 (2006) - Towards an atomistic understanding of phase change materials
C. STEIMER , W. WELNIC , J. KALB , MATTHIAS WUTTIG
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2044-2050 (2006) - Quadrupole and chemical shift interactions in crystalline and amorphous chalcogenides
D. C. BOBELA , P. CRAIG TAYLOR
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2051-2057 (2006) - Giant photo-expansion in chalcogenide glass
K. TANAKA , A. SAITOH , N. TERAKADO
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2058-2065 (2006) - Crystallization kinetics in materials with a two-phase formation from an amorphous phase
E. PROKHOROV , G. TRAPAGA , YU. KOVALENKO
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2066-2069 (2006) - Photo-induced covalent-bond switching in amorphous arsenic selenide
O. SHPOTYUK , V. BALITSKA
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2070-2076 (2006) - Glassy As40Se25Te35 films with high refractive index
V. LYUBIN , M. KLEBANOV , A. ARSH , L. SHAPIRO , B. SFEZ
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2077-2079 (2006) - Optical properties of As-Se amorphous composites
A. M. ANDRIESH , M. S. IOVU
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2080-2085 (2006) - Nano-heteromorphism, structure and relaxation in glassforming Ge-S system Part I. Structure and relaxation in condensed germanium disulfide GeS2
V. V. KALUGIN , V. S. MINAEV , S. P. TIMOSHENKOV , E. N. MARKOVA
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2086-2092 (2006) - Amorphous chalcogenide nano-multilayers: research and development
S. KOKENYESI
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2093-2096 (2006) - Transient responses of photodarkening and photoinduced volume change in amorphous chalcogenide films
K. SHIMAKAWA , Y. IKEDA
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2097-2100 (2006) - Dynamics of photodarkening in amorphous arsenic chalcogenide
Y. SAKAGUCHI , K. TAMURA
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2101-2107 (2006) - Nanostructuring of chalcogenide glasses using electron beam lithography
M. VLCEK , H. JAIN
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2108-2111 (2006) - Phase separation and ionic conductivity: an electric force microscopy investigation of silver chalcogenide glasses
V. BALAN , A. PIARRISTEGUY , M. RAMONDA , A. PRADEL , M. RIBES
Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2112-2116 (2006)
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